Dumbbell stanane: a large-gap quantum spin hall insulator.
نویسندگان
چکیده
A quantum spin Hall (QSH) effect is quite promising for applications in spintronics and quantum computations, but at present, can only be achieved at ultralow temperatures. The determination of large-gap QSH insulators is critical to increase the operating temperature. By using first-principles calculations, we demonstrate that the stable hydrogenated stanene with a dumbbell-like structure (DB stanane) has large topological nontrivial band gaps of 312 meV (Γ point) and 160 meV for the bulk, characterized by a topological invariant of Z2 = 1 because of s-pxy band inversion. Helical gapless edge states appear in the nanoribbon structures with high Fermi velocity comparable to that of graphene. The nontrivial topological states are robust against the substrate effects. The realization of this material is a feasible solution for the applications of QSH effects at room temperature and can be beneficial in the fabrication of high-speed spintronics devices.
منابع مشابه
Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling
For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We sho...
متن کاملPrediction of flatness-driven quantum spin Hall effect in functionalized germanene and stanene.
Searching for realistic materials able to realize room-temperature quantum spin Hall (QSH) effects is currently a growing field, especially when compatibility with the current group-IV electronics industry is required. Here we predict, through first-principles calculations, a new class of QSH phases in flattened germanene and stanene functionalized with X atoms (f-GeX2 and f-SnX2; X = H, F, Cl,...
متن کاملQuantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers
The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a break- through in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show th...
متن کاملStrain-induced quantum spin Hall effect in methyl-substituted germanane GeCH3
Quantum spin Hall (QSH) insulators exhibit a bulk insulting gap and metallic edge states characterized by nontrivial topology. We investigated the electronic structure of an isolated layer of methyl substituted germanane GeCH3 by density functional calculations (DFT), and its dynamic stability by phonon dispersion calculations. Our results show that an isolated GeCH3 layer has no dynamic instab...
متن کاملDriving a GaAs film to a large-gap topological insulator by tensile strain
Search for materials with a large nontrivial band gap is quite crucial for the realization of the devices using quantum spin Hall (QSH) effects. From first-principles calculations combined with a tight-binding (TB) model, we demonstrate that a trivial GaAs film with atomic thickness can be driven to a topological insulator with a sizable band gap by tensile strain. The strain-induced band inver...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Physical chemistry chemical physics : PCCP
دوره 17 25 شماره
صفحات -
تاریخ انتشار 2015